AtsietiPataisytiUždaryti

Biuras Kaune
Beckhoff Automation OÛ

Karaliaus Mindaugo ave. 38
44307 Kaune, Lietuva

+370 605 42400
info@beckhoff.lt
www.beckhoff.com/lt-lt/

Industrial flash memory devices for Beckhoff Industrial PCs

Industrial memory devices in Beckhoff Industrial PCs
Industrial memory devices in Beckhoff Industrial PCs

The industrial SSDs (solid-state drives) from Beckhoff deliver maximum reliability for data storage in challenging operating environments. In the industrial environment, 3D TLC NAND has established itself as the standard for secure data retention. In order to achieve even higher reliability and greater performance from the SSDs, Beckhoff uses 3D TLC flash memory via firmware configuration in pSLC mode.

pSLC mode gives the SSDs and CFast cards a long service life with over 50,000 write cycles. This means that the full capacity of the SSD can be written and erased fully up to 50,000 times before the data retention time drops to one year. Furthermore, the write speeds are optimized, resulting in faster data processing. This speed can be optimally utilized by the NVMe integration via the PCIe interface, as this offers significantly higher transmission rates compared to conventional SATA interfaces. While the SATA interface transmits data at up to 500 MB/s, NVMe SSDs connected to PCIe Generation 4 achieve read and write speeds of up to 6000 MB/s.

In contrast to SSDs in pSLC mode, the established 3D TLC NAND only achieves 3000 write cycles of the memory cells before the data retention time drops to one year. A write cycle describes the process in which a flash memory cell is written with a bit state and erased. At the beginning of the service life, the data retention time of the memory cells is up to ten years, but it decreases continuously with each subsequent write cycle. Using pSLC mode in Beckhoff Industrial PCs makes the service life of the memory cells up to 17 times longer and ensures reliable and long-term data retention.

Further advantages of industrial memory devices

  • long-term data retention time for reliable data storage
  • reduced susceptibility to data errors due to loss of charge or interference between the memory cells
  • reliable detection of bit states thanks to pSLC memory architecture
  • powerful error correction algorithms for data integrity
  • outstanding speeds thanks to 1-bit memory architecture
  • NVMe software protocol: direct communication between SSD and CPU for maximum performance
  • lower latency times: improved response time and system performance
  • 3D memory architecture: optimum memory densities for space-saving designs
  • over 50,000 P/E cycles to ensure a long service life with high write performance
  • High-performance flash memory controllers ensure consistent functionality of the memory cells through intelligent wear leveling.
  • no rotating parts means no mechanical failures or data loss
  • minimized downtime: improved system availability and productivity
  • Memory devices with pSLC memory architecture are the optimum solution for applications with high demands on system performance and service life.
  • ideal for applications with high data rates, such as image processing, machine control, and data acquisition
  • a robust solution for harsh industrial environments: extended temperature range along with high shock and vibration resistance
  • The pSLC memory architecture is the perfect solution when the exact write load of the application is unknown: ‘stress-free flash’.

Industrial SSDs from Beckhoff offer unparalleled reliability, maximum performance, and an outstanding service life. They are the ideal choice for use in demanding industrial environments and applications that need maximum data availability and system performance.

FAQ

In pSLC mode, TLC cells are configured as SLC cells via firmware. Only one bit is stored per memory cell using the two charge levels full = 0 and empty = 1. As a result, the service life is extended since minor charge shifts have no impact on the bit state of the cell. Compared to TLC, which stores eight charge levels per cell, the two charge states 0 and 1 are easier and more reliable to read in pSLC mode.

By defining different charge levels of the charge trap layers, several bits can be stored in a flash cell. Up to four bits can be stored in a single cell. The following NAND types can be distinguished based on the number of bits stored per memory cell:

  • SLC with one bit
  • MLC with two bits
  • TLC with three bits
  • QLC with four bits

Flash memory cells are effectively MOSFET transistors with an additional layer. Insulated by an oxide layer, this charge trap layer can store charge on a non-volatile basis and preserve a bit state in the process. To program the memory cell, a high electrical voltage is applied to the control gate, which injects individual electrons from the channel layer into the charge trap layer. A reference voltage is applied to the control gate to read the bit state. If the charge trap layer is charged, the charge counteracts the current flow through the transistor, which corresponds to bit state 0. If no charge is present in the charge trap layer, the current can flow through the transistor, indicating a bit state of 1.

Compared to 1-bit data storage in pSLC mode, TLC offers the advantage of a higher storage density, allowing larger capacities to be realized in a more compact space. However, storing multiple bits per cell requires more precise voltage gradations, which increases the risk of inaccuracies in the detection of bit states. As a result, the more bit states are stored per cell, the shorter the service life of the SSD. TLC SSDs are therefore suitable for applications which involve writing less data to the memory. In applications with high demands regarding service life or write speed or in the case of unpredictable data loads, on the other hand, pSLC mode is the best choice.

The use of high voltages during write and erase operations gradually wears away the oxide layer of the memory cells over time. After a large number of write cycles, this can lead to electron outflows from the charge trap layer and thus affect the stored voltage state. These changes affect the secure data retention time in the memory cells; in pSLC mode this is still one year even after 50,000 write cycles.

NVMe integration optimizes the transmission speeds of storage media in pSLC mode through direct and efficient communication between the SSD and CPU. Unlike SATA, which is based on the older AHCI protocol, NVMe was developed specifically for SSDs and uses the high-speed PCIe bus for faster data transmission.

With PCIe 4.0, read and write speeds of up to 6000 MB/s can be achieved – a significantly higher data rate compared to SATA (approx. 500 MB/s). Another advantage of NVMe is that it allows parallel requests to be processed more effectively. The system load is distributed more evenly as a result, which is particularly advantageous in applications with high data processing requirements. This leads to a smoother performance overall, ensuring more efficient operation in industrial environments. The low latency of NVMe also helps to ensure reliable data processing.

Industrial PCs with industrial memory devices

Panel PCs

Panel PCs

The Beckhoff Panel PCs, in the versions as built-in devices or mounting arm devices in IP65, combine modern touch technologies with flexible computing power.

PCs

PCs

With self-developed and produced motherboards, the Beckhoff Industrial PCs combine performance with flexibility, stability, and long-term availability.